Micron Technology, Inc.
Gate electrode layout with expanded portions over active and isolation regions

Abstract:

Apparatuses with a gate electrode in a semiconductor device are described. An example apparatus includes an active region surrounded by an isolation region, and a gate electrode extending in a first direction to pass over the active region. The gate electrode includes a body gate portion over the active region, the body gate portion having a first gate length in a second direction perpendicular to the first direction, a lead-out portion over the isolation region, the lead-out portion having a second gate length in the second direction, the second gate length being greater than the first gate length, and a hammer-head portion having a first end in contact with the body gate portion and a second end opposite to the first end in contact with the hammer-head portion.