Micron Technology, Inc.
METHODS OF FORMING ELECTRONIC APPARATUS WITH TITANIUM NITRIDE CONDUCTIVE STRUCTURES, AND RELATED ELECTRONIC APPARATUS AND SYSTEMS

Abstract:

Methods for forming microelectronic devices include forming a titanium nitride (TiN) material over a precursor structure. Forming the TiN material comprises repeating cycles of flowing a titanium-including gas adjacent the precursor structure; flowing a reducing gas over the precursor structure; flowing a nitrogen-including gas over the precursor structure; and, before and after flowing the nitrogen-including gas, purging gas. Related microelectronic device and related electronic systems are also described.