Micron Technology, Inc.
ELECTRONIC STRUCTURES COMPRISING MULTIPLE, ADJOINING HIGH-K DIELECTRIC MATERIALS AND RELATED ELECTRONIC DEVICES, SYSTEMS, AND METHODS

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Abstract:

An electronic structure comprising stacks comprising alternating dielectric materials and conductive materials in a cell region of the electronic structure. A pillar high-k dielectric material is adjacent to the stacks and in a pillar region of the electronic structure. A charge blocking material, a nitride material, a tunnel dielectric material, and a channel material are adjacent to the pillar high-k dielectric material in the pillar region of the electronic structure. A cell high-k dielectric material surrounds the conductive materials in the cell region of the electronic structure. The cell high-k dielectric material adjoins a portion of the pillar high-k dielectric material. Additional electronic structures are disclosed, as are related electronic devices, systems, and methods of forming an electronic device.

Status:
Application
Type:

Utility

Filling date:

29 Apr 2020

Issue date:

4 Nov 2021