Micron Technology, Inc.
Memory having memory cell string and coupling components
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Abstract:
Some embodiments include apparatuses and methods having a conductive line, a memory cell string including memory cells located in different levels the apparatus, and a select circuit including a select transistor and a coupling component coupled between the conductive line and the memory cell string. Other embodiments including additional apparatuses and methods are described.
Status:
Grant
Type:
Utility
Filling date:
9 Sep 2019
Issue date:
14 Dec 2021