Micron Technology, Inc.
Memory having memory cell string and coupling components

Last updated:

Abstract:

Some embodiments include apparatuses and methods having a conductive line, a memory cell string including memory cells located in different levels the apparatus, and a select circuit including a select transistor and a coupling component coupled between the conductive line and the memory cell string. Other embodiments including additional apparatuses and methods are described.

Status:
Grant
Type:

Utility

Filling date:

9 Sep 2019

Issue date:

14 Dec 2021