Micron Technology, Inc.
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

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Abstract:

A semiconductor device includes a semiconductor substrate; and a multilevel wiring structure on the semiconductor substrate, the multilevel wiring structure including at least an intermediate metal layer over the semiconductor substrate and an uppermost metal layer over the intermediate metal layer, and the multilevel wiring structure being divided into a main circuit portion and a scribe portion surrounding the main circuit portion; wherein the scribe portion of the multilevel wiring layer includes at least a metal pad exposed in the intermediate metal layer.

Status:
Application
Type:

Utility

Filling date:

15 Jun 2020

Issue date:

16 Dec 2021