Micron Technology, Inc.
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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Abstract:
A semiconductor device includes a semiconductor substrate; a first insulating film and a second insulating film provided above the semiconductor substrate; a low-k film provided between the first insulating film and the second insulating film; an element formation region in which elements included in an electric circuit are formed in the semiconductor substrate; a scribe region provided around the element formation region; a cut portion provided on the outer periphery of the scribe region; and a groove formed between the cut portion and the element formation region, wherein the groove penetrates through the low-k film.
Status:
Application
Type:
Utility
Filling date:
27 May 2020
Issue date:
2 Dec 2021