Micron Technology, Inc.
COMMAND TRIGGERED POWER GATING FOR A MEMORY DEVICE

Abstract:

Methods, systems, and devices for command triggered power gating for a memory device are described. Row logic circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the row logic circuitry may be on when a bank of the memory array is an active state but may be off when the bank is in a stand-by or power-down state. Additionally or alternatively, error correction circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the error correction circuitry may be on during an access portion of an access sequence but may otherwise be off.