Micron Technology, Inc.
STANDBY BIASING TECHNIQUES TO REDUCE READ DISTURBS

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Abstract:

Devices and techniques are disclosed herein to provide a high-voltage bias signal in a standby state of the storage system without exceeding a limited maximum standby current allowance of the storage system. The high-voltage bias signal can enable a string driver circuit in the standby state to couple a global word line to a local word line, to provide a bias to, or sink a voltage from, a pillar of a string of memory cells of the storage system in the standby state, such as to reduce read disturbances in the storage system.

Status:
Application
Type:

Utility

Filling date:

16 Aug 2021

Issue date:

2 Dec 2021