Micron Technology, Inc.
Management of corruptive read in memory systems

Abstract:

Described herein are embodiments related to one-direction error recovery flow (ERF) operations on memory components of memory systems. A processing device determines that data from a read operation is not successfully decoded because of a partial write of the data. The partial write results from a number of memory cells written as a first state and read as a second state. The processing device performs a one-direction ERF on the memory cells by monotonically adjusting a read voltage level for one or more re-read operations from a first discrete read voltage level towards a second read voltage level in a first direction until the data from the one or more re-read operations is successfully decoded. The first direction corresponds to an opposite direction of a state shift of the partial write. The processing device can also can determine a directional EBC and perform a refresh write if necessary.