Micron Technology, Inc.
Performing threshold voltage offset bin selection by package for memory devices

Abstract:

An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with the memory device; program a first block in a first die of the memory device and a second block in a second die of the memory device, wherein the first die and the second die are assigned to a die group; associate the first block and the second block with the block family; and associate the die group with a first threshold voltage offset bin.