Micron Technology, Inc.
Transistors, memory structures and memory arrays containing two-dimensional materials between a source/drain region and a channel region

Abstract:

Some embodiments include an integrated assembly having a semiconductor material with a more-doped region adjacent to a less-doped region. A two-dimensional material is between the more-doped region and a portion of the less-doped region. Some embodiments include an integrated assembly which contains a semiconductor material, a metal-containing material over the semiconductor material, and a two-dimensional material between a portion of the semiconductor material and the metal-containing material. Some embodiments include a transistor having a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, and a two-dimensional material between the channel region and the first source; drain region.