Micron Technology, Inc.
Integrated assemblies comprising voids between active regions and conductive shield plates, and methods of forming integrated assemblies

Abstract:

Some embodiments include integrated memory having a wordline, a shield plate, and an access device. The access device includes first and second diffusion regions, and a channel region. The channel region is vertically disposed between the first and second diffusion regions. The access device is adjacent to the wordline and to the shield plate. A part of the wordline is proximate a first side surface of the channel region with an intervention of a first insulating region therebetween. A part of the shield plate is proximate a second side surface of the channel region with an intervention of a second insulating region therebetween. The first insulating region includes an insulative material. The second insulating region includes a void. Some embodiments include memory arrays. Some embodiments include methods of forming integrated assemblies.