Micron Technology, Inc.
Storage node after three-node access device formation for vertical three dimensional (3D) memory

Abstract:

Systems, methods and apparatus are provided for storage node after horizontally oriented, three-node access device formation in vertical three dimensional (3D) memory. An example method includes a method for forming arrays of vertically stacked memory cells, having horizontally oriented access devices and vertically oriented access lines. The method includes forming elongated vertical, pillar columns with sidewalls in a vertical stack. A first conductive material is conformally deposited on a gate dielectric material in the first vertical openings. Portions of the first conductive material are removed to form a plurality of separate, vertical access lines along the sidewalls of the elongated vertical, pillar columns. A second vertical opening is formed through the vertical stack to expose a first region of the sacrificial material. A third vertical opening is formed through the vertical stack to in which to form a storage node electrically coupled to the first source/drain material.