Micron Technology, Inc.
Semiconductor device including capacitor and method of forming the same

Last updated:

Abstract:

A semiconductor device includes a substrate, a lower electrode provided over the substrate, a capacitive insulating film, and an upper electrode provided over the lower electrode, wherein the lower electrode has an upper portion and a lower portion, and at a boundary between the upper portion and the lower portion, the diameter of the upper portion is smaller than the diameter of the lower portion.

Status:
Grant
Type:

Utility

Filling date:

18 Mar 2020

Issue date:

18 Jan 2022