Micron Technology, Inc.
ELECTRICAL DISTANCE-BASED WAVE SHAPING FOR A MEMORY DEVICE

Abstract:

Memory devices may have an array of elements in two or more dimensions. The memory devices use multiple access lines arranged in a grid to access the memory devices. Memory cells located at intersections of the access lines in the grid. Drivers are used for each access line and configured to transmit a corresponding signal to respective memory cells of the plurality of memory cells via a corresponding access line. The memory devices uses an electrical distance calculator to determine an electrical distance from a memory cell to a respective driver of the plurality of drivers. The memory device also uses a driver modulator to modulate the corresponding signal based at least in part on the electrical distance.