Micron Technology, Inc.
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES AND ELECTRONIC SYSTEMS

Abstract:

A method of forming a microelectronic device comprises forming a stack structure. Pillar structures are formed to vertically extend through the stack structure. At least one trench and additional trenches are formed to substantially vertically extend through the stack structure. Each of the additional trenches comprises a first portion having a first width, and a second portion at a horizontal boundary of the first portion and having a second width greater than the first width. A dielectric structure is formed within the at least one trench and the additional trenches. The dielectric structure comprises at least one angled portion proximate the horizontal boundary of the first portion of at least some of the additional trenches. The at least one angled portion extends at an acute angle to each of a first direction and a second direction transverse to the first direction. Microelectronic devices and electronic systems are also described.