Micron Technology, Inc.
TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED MEMORY CELLS AND SEMICONDUCTOR DEVICES

Abstract:

A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.