Micron Technology, Inc.
Construction of integrated circuitry, DRAM circuitry, a method of forming a conductive line construction, a method of forming memory circuitry, and a method of forming DRAM circuitry

Abstract:

A construction of integrated circuitry comprises a horizontal longitudinally-elongated conductive line. A horizontal longitudinally-elongated void space extends longitudinally along opposing longitudinal sides of the conductive line. The void space along each of the opposing longitudinal sides has cyclically varying height longitudinally along the conductive line. Methods independent of the above structure are disclosed.