Micron Technology, Inc.
Integrated Assemblies and Methods of Forming Integrated Assemblies

Last updated:

Abstract:

Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include conductive structures. Channel material extends vertically through the stack. The conductive structures have proximal regions near the channel material, and have distal regions further from the channel material than the proximal regions. The insulative levels have first regions vertically between the proximal regions of neighboring conductive structures, and have second regions vertically between the distal regions of the neighboring conductive structures. Voids are within the insulative levels and extend across portions of the first and second regions. Some embodiments include methods for forming integrated assemblies.

Status:
Application
Type:

Utility

Filling date:

21 Oct 2021

Issue date:

10 Feb 2022