Micron Technology, Inc.
BALANCED THREE-LEVEL READ DISTURB MANAGEMENT IN A MEMORY DEVICE

Abstract:

Methods, systems, devices, and computer-readable media are disclosed for performing read disturb management of a memory device. In one embodiment, a method is disclosed comprising retrieving a value of a read counter for a block associated with a read request issued to a memory array; refreshing valid word lines in the block if the value of the read counter exceeds a first threshold; identifying a set of valid word lines in the block if the value of the read counter exceeds a second threshold, the second threshold lower than the first threshold; identifying a subset of the set of valid word lines, the subset of the set of valid word lines including word lines having an error rate above a pre-configured error rate threshold; and refreshing the subset of the set of valid word lines.