Micron Technology, Inc.
Apparatus for calibrating sensing of memory cell data states

Abstract:

Memory might include controller configured to apply a first predetermined voltage level to a capacitance of a sense circuit during a first sensing stage of a sensing operation, determine a first value of an output of the particular sense circuit while applying the first predetermined voltage level, apply a second predetermined voltage level to the capacitance during a second sensing stage of the sensing operation, determine a second value of the output of the particular sense circuit while applying the second predetermined voltage level, determine a particular voltage level in response to at least the first value and the second value, and apply the particular voltage level to the capacitance during a final sensing stage of the sensing operation.