Micron Technology, Inc.
Plurality of edge through-silicon vias and related systems, methods, and devices

Abstract:

Disclosed is a plurality of through-silicon vias (TSVs) and related systems, methods, and devices. An electronic device includes a stack of chips, a first TSV, and a second TSV. The stack of chips includes one or more side edges at a perimeter of the stack of chips. A TSV zone of the stack of chips is within a predetermined distance from the one or more side edges. The first TSV is within the TSV zone of the stack of chips at a first distance from the one or more side edges. The second TSV is within the TSV zone of the stack of chips at a second distance from the one or more side edges. The second distance is shorter than the first distance.