Micron Technology, Inc.
Volatile memory device with 3-D structure including memory cells having transistors vertically stacked one over another

Abstract:

Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes volatile memory cells located along a pillar that has a length extending in a direction perpendicular to a substrate of a memory device. Each of the volatile memory cells includes a capacitor and at least one transistor. The capacitor includes a capacitor plate. The capacitor plate is either formed from a portion a semiconductor material of the pillar or formed from a conductive material separated from the pillar by a dielectric.