Micron Technology, Inc.
Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

Abstract:

A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.