Micron Technology, Inc.
Memory data correction using multiple error control operations

Abstract:

Methods, systems, and devices for memory data correction using multiple error control operations are described. A single command may be received to correct an error detected in data stored by a memory array. A first error control operation and a second error control operation may be implemented based on the single command. The first error control operation may be performed on the data stored by the memory array using one or more different reference voltages to read the data. The error may be determined to remain in the data after performing the first error control operation. The second error control operation may then be performed on the data stored by the memory array. The second error control operation may use one or more voltage distributions associated with the memory cells of the memory array.