Micron Technology, Inc.
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

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Abstract:

A semiconductor device includes a substrate, a lower electrode provided over the substrate, a capacitive insulating film, and an upper electrode provided over the lower electrode, wherein the lower electrode has an upper portion and a lower portion, and at a boundary between the upper portion and the lower portion, the diameter of the upper portion is smaller than the diameter of the lower portion.

Status:
Application
Type:

Utility

Filling date:

31 Dec 2021

Issue date:

21 Apr 2022