Micron Technology, Inc.
Circuit-protection devices

Abstract:

Circuit-protection devices might include first and second circuit-protection units each comprising a first node and a second node, a first field-effect transistor having a first source/drain connected to the first node of the first circuit-protection unit, and a second field-effect transistor having a first source/drain connected to the first node of the second circuit-protection unit, wherein a second source/drain of the first field-effect transistor merges with a second source/drain of the second field-effect transistor.