Micron Technology, Inc.
Memory device including dynamic programming voltage

Abstract:

Some embodiments include apparatus and methods using access lines, first memory cells coupled to an access line of the access lines, and a control unit including circuitry. The control unit is configured to apply a first voltage to the access line; check first threshold voltages of the first memory cells after applying the first voltage; obtain offset information based on a determination that at least one of the first threshold voltages is greater than a selected voltage; generate a second voltage, the second voltage being a function of the first voltage and the offset information; and apply the second voltage to one of the access lines during an operation of storing information in second memory cells.