Micron Technology, Inc.
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells

Abstract:

A memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material in a lowest of the conductive tiers comprises intervenor material. Bridges extend laterally-between the immediately-laterally-adjacent memory blocks. The bridges comprise bridging material that is of different composition from that of the intervenor material. The bridges are longitudinally-spaced-along the immediately-laterally-adjacent memory blocks by the intervenor material and extend laterally into the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.