Micron Technology, Inc.
MEMORY CELL SENSING

Abstract:

Memory might include a controller configured to cause the memory to apply a boost voltage level to each capacitance of a plurality of capacitances each connected to a respective node of a sense circuit, selectively discharge each of the nodes through respective memory cells selected for a sense operation, measure a current demand of the plurality of capacitances while each of the nodes is connected to its respective memory cell, determine a deboost voltage level in response to the measured current demand, apply the deboost voltage level to each capacitance of the plurality of capacitances, and determine a respective data state of each memory cell of the plurality of memory cells while the deboost voltage level is applied to each capacitance of the plurality of capacitances.