Micron Technology, Inc.
MICROELECTRONIC DEVICES INCLUDING ISOLATION STRUCTURES NEIGHBORING STAIRCASE STRUCTURES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS

Abstract:

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, a staircase structure within the stack structure having steps comprising horizontal edges of the tiers, a first insulative material vertically overlying the staircase structure, conductive contact structures comprising a conductive material extending through the first insulative material and in contact with the steps of the staircase structure, and a second insulative material extending in a first horizontal direction between horizontally neighboring conductive contact structures and exhibiting one or more different properties than the first insulative material. Related microelectronic devices, electronic systems, and methods are also described.