Micron Technology, Inc.
Modifying conditions for memory device error connection operations

Abstract:

A first error rating for a first memory access operation performed for data stored at a memory device operating at a first state is determined. In response to a determination that the first error rating satisfies a first error rating condition associated with the first state of the memory device, a first error correction operation is performed at the memory device. A change of the state of the memory device from the first state to a second state is detected. A second error rating condition associated with the memory device is determined based on the second state of the memory device. A second error rating is determined for a second memory access operation performed at the memory device. In response to a determination that the second error rating satisfies the second error rating condition, a second error correction operation is performed at the memory device.