Micron Technology, Inc.
Electrical distance-based remapping in a memory device

Abstract:

Memory device systems and methods for using methods include multiple access lines arranged in a grid. Multiple memory cells are located at intersections of the access lines in the grid. Multiple drivers are included with each configured to transmit a corresponding signal to respective memory cells of the multiple memory cells. Remapping circuitry is configured to remap a near memory cell of the multiple memory cells to a far memory cell of the multiple memory cells. The near memory cell is relatively nearer to a respective driver of the multiple drivers than the far memory cell is to a respective driver of the multiple drivers.