Micron Technology, Inc.
Apparatuses and methods using negative voltages in part of memory write, read, and erase operations

Abstract:

Some embodiments include apparatuses and methods having a memory cell string that can include memory cells located in different levels of the apparatus. The memory cell string can include a body associated with the memory cells. At least one of such embodiments can include a module configured to apply a negative voltage to at least a portion of the body of the memory cell string during an operation of the apparatus. The operation can include a read operation, a write operation, or an erase operation. Other embodiments are described.