Micron Technology, Inc.
Integrated Assemblies

Abstract:

Some embodiments include an integrated assembly having a memory array over a base. The memory array includes a three-dimensional arrangement of memory cells. Sense amplifiers are associated with the base and are directly under the memory array. Vertically-extending digit lines pass through the arrangement of the memory cells and are coupled with the sense amplifiers. Some embodiments include an integrated assembly having a memory bank containing 64 memory chunks arranged in a 16.times.4 configuration. Some embodiments include an integrated assembly having a memory bank which contains 512 megabytes divided amongst 64 memory chunks which each have 8 megabytes. The 64 memory chunks are arranged in a configuration having multiple rows which each contain a two or more of the memory chunks.