Micron Technology, Inc.
MEMORY DEVICE INCLUDING VOLTAGE CONTROL FOR DIFUSSION REGIONS ASSOCIATED WITH MEMORY BLOCKS

Abstract:

Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a first memory block including first control gates for respective first memory cells of the first memory block; a second memory block including second control gates for respective second memory cells of the second memory block; first diffusion regions coupled to the first control gates; second diffusion regions adjacent the first diffusion regions, the second diffusion regions coupled to the second control gates; and a circuit to apply a voltage to the second diffusion regions in a write operation performed on the first memory block.