Micron Technology, Inc.
Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

Abstract:

A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. Laterally-spaced memory-block regions are formed and individually comprise a vertical stack comprising alternating first tiers and second tiers directly above the conductor tier. Channel-material strings of memory cells extend through the first tiers and the second tiers. Horizontally-elongated lines are formed in the conductor material between the laterally-spaced memory-block regions. The horizontally-elongated lines are of different composition from an upper portion of the conductor material that is laterally-between the horizontally-elongated lines. After the horizontally-elongated lines are formed, conductive material of a lowest of the first tiers is formed that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. Other embodiments, including structure independent of method, are disclosed.