Micron Technology, Inc.
CAPACITORS WITH ELECTRODES HAVING A PORTION OF MATERIAL REMOVED, AND RELATED SEMICONDUCTOR DEVICES, SYSTEMS, AND METHODS
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Abstract:
A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.
Status:
Application
Type:
Utility
Filling date:
13 Jan 2022
Issue date:
28 Jul 2022