Micron Technology, Inc.
Integrated Assemblies and Semiconductor Memory Devices

Abstract:

Some embodiments include an integrated assembly having a CMOS region. Fins extend across the CMOS region and are on a first pitch. A circuit arrangement is associated with the CMOS region and includes segments of one or more of the fins. The circuit arrangement has a first dimension along a first direction. A second region is proximate the CMOS region. Conductive structures are associated with the second region. The conductive structures extend along a second direction different than the first direction. Some of the conductive structures are electrically coupled with the circuit arrangement. The conductive structures are on a second pitch different from the first pitch. A second dimension is a distance across said some of the conductive structures along the first direction, and the second dimension is substantially the same as the first dimension.