Micron Technology, Inc.
SEMICONDUCTOR DEVICES, TRANSISTORS, AND RELATED METHODS FOR CONTACTING METAL OXIDE SEMICONDUCTOR DEVICES

Abstract:

A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.