Micron Technology, Inc.
Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions

Abstract:

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. The channel region is crystalline and comprises a plurality of vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region. Other embodiments, including methods, are disclosed.