Micron Technology, Inc.
Systems and methods for power savings in row repaired memory

Last updated:

Abstract:

A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.

Status:
Grant
Type:

Utility

Filling date:

4 Nov 2020

Issue date:

16 Aug 2022