Micron Technology, Inc.
Dielectric extensions in stacked memory arrays

Abstract:

In an example of forming a stacked memory array, a stack of alternating first and second dielectrics is formed. A dielectric extension is formed through the stack such that a first portion of the dielectric extension is in a first region of the stack between a first group of semiconductor structures and a second group of semiconductor structures in a second region of the stack and a second portion of the dielectric extension extends into a third region of the stack that does not include the first and second semiconductor structures. An opening is formed through the first region, while the dielectric extension couples the alternating first and second dielectrics in the third region to the alternating first and second dielectrics in the second region.