Micron Technology, Inc.
Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells

Abstract:

A programmable charge-storage transistor comprises channel material, insulative charge-passage material, charge-storage material, a control gate, and charge-blocking material between the charge-storage material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material. Arrays of elevationally-extending strings of memory cells of memory cells are disclosed, including methods of forming such. Other embodiments, including method, are disclosed.