Micron Technology, Inc.
Memory device having an enhanced ESD protection and a secure access from a testing machine

Abstract:

An example memory device includes an array of memory cells, a plurality of boundary cells, mixed pads connected to the memory cells, high speed pads connected to the boundary cells, a three state multiplexer block connected to the memory cells and to the boundary cells and configured to receive at least first and second input signals, and the three state multiplexer block is connected to the mixed pads. The example memory device further includes an enabling circuit connected to a mixed pad and configured to receive an external enabling signal and provide the three state MUX with an internal enabling signal, and comprising: a tester presence detector circuit connected to the mixed pad and configured to provide a presence signal to a logical gate, the logical gate having input terminals connected to the tester presence detector circuit and configured to provide the internal enabling signal.