Micron Technology, Inc.
Memory error indicator for high-reliability applications

Abstract:

Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.