Micron Technology, Inc.
Interleaved two-pass data programming techniques with reduced write amplification

Abstract:

In a coarse programming, the threshold voltage of the memory cell is programmed to a first level representative of N-1 bit values data according to a first mapping between combinations of values of N-1 possible bits and threshold levels. A group identification is representative of whether the first level is an odd or even numbered level in the first mapping. For a fine programming, the memory cell is read, based on the group identification, to obtain the N-1 bit values; and at least one additional bit is received to join the N-1 bit values to form at least N bit values. The threshold voltage of the memory cell is then finely programmed to a second level representative of the at least N bit values according to a second mapping between combinations of values of the at least N possible bits and threshold levels.