Micron Technology, Inc.
Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells

Abstract:

A transistor comprises a channel region having a frontside and a backside. The channel region comprises a frontside channel material at the frontside and a backside channel material at the backside. A gate is adjacent the frontside of the channel region, with a gate insulator being between the gate and the channel region. The frontside channel material has total n-type dopant therein of greater than 1.times.10.sup.18 atoms/cm.sup.3 to no greater than 1.times.10.sup.20 atoms/cm.sup.3. The backside channel material has total n-type dopant therein of 0 atoms/cm.sup.3 to 1.times.10.sup.18 atoms/cm.sup.3. Other embodiments and aspects are disclosed.