Micron Technology, Inc.
LAYER INTERLEAVING IN MULTI-LAYERED MEMORY

Abstract:

In a memory sub-system, data can be received to be stored at a 3-dimensional (3D) memory component in response to a write operation. A first location of a first layer of the 3D memory component is determined at which to store a first portion of the data, where the first layer is within a first logical unit. A second location of a second layer of the 3D memory component is determined at which to store a second portion of the data, where the second layer is within a second logical unit that is different than the first logical unit. The first portion of the data is caused to be stored in first memory cells at the first location within the first layer. The second portion of the data is caused to be stored in second memory cells at the second location within the second layer.