Micron Technology, Inc.
METHODS OF FORMING AN ELECTRONIC DEVICE COMPRISING DEUTERIUM-CONTAINING DIELECTRIC MATERIALS AND RELATED ELECTRONIC DEVICES AND SYSTEMS

Abstract:

A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.